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Farid Tootoonchian
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Journal Articles
- 2023
- [j10]Fateme Zare, Farid Tootoonchian, Ahmad Daniar, Matthew C. Gardner, Bilal Akin:
Magnetic Equivalent Circuit Model for Performance Prediction of Two-DOF Planar Resolver. IEEE Access 11: 102207-102216 (2023) - [j9]Mohammad Bahari, Farid Tootoonchian, Amin Mahmoudi:
An Electromagnetic Design of Slotless Variable Reluctance PM-Resolver. IEEE Trans. Ind. Electron. 70(5): 5336-5346 (2023) - [j8]Mahdi Emadaleslami, MohammadSadegh KhajueeZadeh, Farid Tootoonchian:
Static Eccentricity Fault Location Diagnosis in Resolvers Using Siamese-Based Few-Shot Learning. IEEE Trans. Instrum. Meas. 72: 1-9 (2023) - [j7]Farid Tootoonchian, Fateme Zare:
Presentation of a Novel Absolute Variable-Reluctance Tubular Resolver. IEEE Trans. Instrum. Meas. 72: 1-8 (2023) - 2022
- [j6]Reza Faryadras, Farid Tootoonchian:
Design and Experimental Investigation of a Two-DOF Planar Resolver. IEEE Trans. Instrum. Meas. 71: 1-8 (2022) - 2021
- [j5]Hamid Saneie, Zahra Nasiri-Gheidari, Farid Tootoonchian, Ahmad Daniar:
Simplified Winding Arrangement for Integrated Multiturn Resolvers. IEEE Trans. Ind. Electron. 68(12): 12802-12809 (2021) - [j4]Ali Keyvannia, Fateme Zare, Farid Tootoonchian:
Analytical Modeling of Variable-Reluctance Tubular Resolver Based on Magnetic Equivalent Circuit and Conformal Mapping. IEEE Trans. Instrum. Meas. 70: 1-8 (2021) - 2020
- [j3]Hamid Saneie, Zahra Nasiri-Gheidari, Farid Tootoonchian:
Structural Design and Analysis of a High Reliability Multi-Turn Wound-Rotor Resolver for Electric Vehicle. IEEE Trans. Veh. Technol. 69(5): 4992-4999 (2020) - 2019
- [j2]Ramin Alipour-Sarabi, Zahra Nasiri-Gheidari, Farid Tootoonchian, Hashem Oraee:
Improved Winding Proposal for Wound Rotor Resolver Using Genetic Algorithm and Winding Function Approach. IEEE Trans. Ind. Electron. 66(2): 1325-1334 (2019) - 2018
- [j1]Hamid Saneie, Zahra Nasiri-Gheidari, Farid Tootoonchian:
Design-Oriented Modelling of Axial-Flux Variable-Reluctance Resolver Based on Magnetic Equivalent Circuits and Schwarz-Christoffel Mapping. IEEE Trans. Ind. Electron. 65(5): 4322-4330 (2018)
Coauthor Index
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