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Journal Articles
- 2023
[j5]P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
:
Impact of self-heating on thermal noise in In1-xGaxAs GAA MOSFETs. Microelectron. J. 131: 105661 (2023)- 2020
- [j4]Ashish Kumar Singh, Manas Ranjan Tripathy, Kamalaksha Baral, Prince Kumar Singh, Satyabrata Jit:
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter. Microelectron. J. 102: 104775 (2020) - 2013
- [j3]Shweta Tripathi, Satyabrata Jit:
Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions. IET Circuits Devices Syst. 7(1) (2013) - 2010
- [j2]Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit:
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs. IET Circuits Devices Syst. 4(4): 337-345 (2010) - 2006
- [j1]Satyabrata Jit, Neti V. L. Narasimha Murty:
Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs. Microelectron. J. 37(5): 452-458 (2006)
Conference and Workshop Papers
- 2019
- [c5]Balraj Singh, Deepti Gola, Satyabrata Jit:
Subthreshold Performance Analysis of Double-Fin Multi-channel Junctionless Transistor with Substrate Bias Effects. TENCON 2019: 1834-1837 - 2016
- [c4]Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit:
Electrical and optical characteristics of CdSe Quantum Dot based Schottky diode. ICIIS 2016: 774-777 - [c3]Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit:
Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor. iNIS 2016: 210-213 - [c2]Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit:
Electrical and Optical Characteristics of Pd/ZnO Quantum Dots Based Schottky Photodiode on n-Si. iNIS 2016: 214-217 - 2011
- [c1]Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit:
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs. ISVLSI 2011: 327-328
Coauthor Index
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