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T. Bergunde

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2016
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Muhammad Alshahed, Mohammed Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen:
600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. ESSDERC 2016: 202-205

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