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S. K.-Y. Shi

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2010 – 2019

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2015
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Chia-Hong Jan, F. Al-amoody, H.-Y. Chang, T. Chang, Y.-W. Chen, N. Dias, Walid M. Hafez, Doug B. Ingerly, M. Jang, Eric Karl, S. K.-Y. Shi, K. Komeyli, H. Kilambi, A. Kumar, K. Byon, C.-G. Lee, J. Lee, T. Leo, P.-C. Liu, N. Nidhi, R. Olac-vaw, C. Petersburg, K. Phoa, Chetan Prasad, C. Quincy, R. Ramaswamy, T. Rana, L. Rockford, Aravinth Subramaniam, C. Tsai, Peter Vandervoorn, L. Yang, A. Zainuddin, Peng Bai:
A 14 nm SoC platform technology featuring 2^nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um² SRAM cells, optimized for low power, high performance and high density SoC products. VLSIC 2015: 12-

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