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Atsuro Kobayashi

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Conference and Workshop Papers

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2017
[c3]
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  - conf/cicc/DeguchiNKT17
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  - https://dblp.org/rec/conf/cicc/DeguchiNKT17
Yoshiaki Deguchi, Toshiki Nakamura, Atsuro Kobayashi, Ken Takeuchi:
12× bit-error acceptable, 300× extended data-retention time, value-aware SSD with vertical 3D-TLC NAND flash memories for image recognition. CICC 2017: 1-4
2016
[c2]
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Atsuro Kobayashi, Tsukasa Tokutomi, Ken Takeuchi:
Versatile TLC NAND flash memory control to reduce read disturb errors by 85% and extend read cycles by 6.7-times of Read-Hot and Cold data for cloud data centers. VLSI Circuits 2016: 1-2
2015
[c1]
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  - conf/isscc/TokutomiDHKTT15
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Tsukasa Tokutomi, Masafumi Doi, Shogo Hachiya, Atsuro Kobayashi, Shuhei Tanakamaru, Ken Takeuchi:
7.7 Enterprise-grade 6x fast read and 5x highly reliable SSD with TLC NAND-flash memory for big-data storage. ISSCC 2015: 1-3

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