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ORCIDMahesh Siddabathula
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2020 – today
- 2023
[c7]D. Lipp, Z. Zhao, G. Krause, Wafa Arfaoui, Elodie Ebrard, Germain Bossu, S. Evseev, Markus Herklotz, Mahesh Siddabathula:
Excellent Reliability performances of a truly 5V nBOXFET for Automotive and IOT applications. IRPS 2023: 1-5- 2022
- [c6]Germain Bossu, Shafi Syed, S. Evseev, Joris Angelo Sundaram Jerome, Wafa Arfaoui, D. Lipp, Mahesh Siddabathula:
22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability. IRPS 2022: 4 - [c5]T. L. Tan, C. W. Eng, H. Xu, J. M. Soon, E. Ebard, Mahesh Siddabathula, B. F. Phoong, K. H. Poh, M. Prabhu, X.-L. Zhao, J. M. Koo, K. Cho, G.-W. Zhang:
A Deeper Understanding of Well Charging Reliability with Circuit Relevant Test Structures. IRPS 2022: 45-1 - 2021
- [c4]Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam:
Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. IRPS 2021: 1-6 - [c3]Pratik B. Vyas, Ninad Pimparkar, Robert Tu, Wafa Arfaoui, Germain Bossu, Mahesh Siddabathula, Steffen Lehmann, Jung-Suk Goo, Ali B. Icel:
Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection. IRPS 2021: 1-4 - 2020
- [c2]Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula:
A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c1]Alexander Hirler, Adnan Alsioufy, Josef Biba, T. Lehndorff, D. Lipp, Helmut Lochner, Mahesh Siddabathula, S. Simon, Torsten Sulima, Maciej Wiatr, Walter Hansch:
Alternating Temperature Stress and Deduction of Effective Stress Levels from Mission Profiles for Semiconductor Reliability. IRPS 2019: 1-4 - 2014
- [j1]Xinggong Wan, Sandhya Chandrashekhar, Boris Bayha, Martin Trentzsch, Torben Balzer, Mahesh Siddabathula, Oliver Aubel:
A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28 nm node. Microelectron. Reliab. 54(9-10): 2306-2309 (2014)
Coauthor Index
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