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Michael J. Uren
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2020 – today
- 2023
- [c3]Akhil S. Kumar, Michael J. Uren
, Matthew D. Smith
, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell:
Dielectric Thickness and Fin Width Dependent OFF-State Degradation in AlGaN/GaN SLCFETs. IRPS 2023: 1-4 - 2020
- [c2]Michael J. Uren, Martin Kuball:
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer. BCICTS 2020: 1-8
2010 – 2019
- 2018
- [j11]Serge Karboyan, Michael J. Uren
, Manikant
, James W. Pomeroy, Martin Kuball:
On the origin of dynamic Ron in commercial GaN-on-Si HEMTs. Microelectron. Reliab. 81: 306-311 (2018) - 2017
- [j10]Alexander Pooth, Johan Bergsten, Niklas Rorsman
, Hassan Hirshy
, R. Perks, Paul J. Tasker, Trevor Martin, Richard F. Webster
, Dave Cherns, Michael J. Uren
, Martin Kuball
:
Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. Microelectron. Reliab. 68: 2-4 (2017) - [c1]Arno Stockman, Michael J. Uren
, Alaleh Tajalli, Matteo Meneghini
, Benoit Bakeroot, Peter Moens:
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. ESSDERC 2017: 130-133 - 2015
- [j9]Tommaso Brazzini
, Michael A. Casbon, Huarui Sun
, Michael J. Uren
, Jonathan Lees
, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball:
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectron. Reliab. 55(12): 2493-2498 (2015) - [j8]James W. Pomeroy, Michael J. Uren
, Benoit Lambert, Martin Kuball:
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing. Microelectron. Reliab. 55(12): 2505-2510 (2015) - 2014
- [j7]Janina Möreke
, Chris Hodges
, Laura L. E. Mears
, Michael J. Uren
, Robert M. Richardson
, Martin Kuball:
Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 54(5): 921-925 (2014) - [j6]Huarui Sun
, Miguel Montes Bajo
, Michael J. Uren
, Martin Kuball:
Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. Microelectron. Reliab. 54(12): 2650-2655 (2014) - 2012
- [j5]William McGenn
, Michael J. Uren
, Johannes Benedikt, Paul J. Tasker
:
Development of an RF IV waveform based stress test procedure for use on GaN HFETs. Microelectron. Reliab. 52(12): 2880-2883 (2012)
2000 – 2009
- 2003
- [j4]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière
, A. Minko, Michael J. Uren
:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003) - 2001
- [j3]Mike S. L. Lee, Bernard M. Tenbroek, William Redman-White, James Benson, Michael J. Uren
:
A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation. IEEE J. Solid State Circuits 36(1): 110-121 (2001)
1990 – 1999
- 1999
- [j2]Christopher F. Edwards, William Redman-White, Mark Bracey, Bernard M. Tenbroek, Michael S. L. Lee, Michael J. Uren
:
A multibit ΣΔ modulator in floating-body SOS/SOI CMOS for extreme radiation environments. IEEE J. Solid State Circuits 34(7): 937-948 (1999) - 1998
- [j1]Bernard M. Tenbroek, Michael S. L. Lee, William Redman-White, R. John T. Bunyan, Michael J. Uren
:
Impact of self-heating and thermal coupling on analog circuits in SOI CMOS. IEEE J. Solid State Circuits 33(7): 1037-1046 (1998)
Coauthor Index

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