
BibTeX records: Thierry Conard
@article{DBLP:journals/mr/LiSPSCSAAEBDNLGM07, author = {Z. Li and Tom Schram and Luigi Pantisano and A. Stesmans and Thierry Conard and S. Shamuilia and V. V. Afanasiev and A. Akheyar and Sven Van Elshocht and D. P. Brunco and W. Deweerd and Y. Naoki and P. Lehnen and Stefan De Gendt and Kristin De Meyer}, title = {Mechanism of O\({}_{\mbox{2}}\)-anneal induced V\({}_{\mbox{fb}}\) shifts of Ru gated stacks}, journal = {Microelectron. Reliab.}, volume = {47}, number = {4-5}, pages = {518--520}, year = {2007}, url = {https://doi.org/10.1016/j.microrel.2007.01.054}, doi = {10.1016/j.microrel.2007.01.054}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/LiSPSCSAAEBDNLGM07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/RothschildMKSEDCRVVVLBDJNAB07, author = {A. Rothschild and R. Mitsuhashi and C. Kerner and X. Shi and J. L. Everaert and L. Date and Thierry Conard and Olivier Richard and C. Vrancken and R. Verbeeck and Anabela Veloso and A. Lauwers and M. de Potter de ten Broeck and I. Debusschere and M. Jurczak and M. Niwa and Philippe Absil and S. Biesemans}, title = {Optimization of HfSiON using a design of experiment {(DOE)} approach on 0.45 {V} V\({}_{\mbox{t}}\) Ni-FUSI {CMOS} transistors}, journal = {Microelectron. Reliab.}, volume = {47}, number = {4-5}, pages = {521--524}, year = {2007}, url = {https://doi.org/10.1016/j.microrel.2007.01.042}, doi = {10.1016/j.microrel.2007.01.042}, timestamp = {Tue, 07 Jul 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/RothschildMKSEDCRVVVLBDJNAB07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/KaushikCDERCRWCG05, author = {Vidya Kaushik and Martine Claes and Annelies Delabie and Sven Van Elshocht and Olivier Richard and Thierry Conard and Erika Rohr and Thomas Witters and Matty Caymax and Stefan De Gendt}, title = {Observation and characterization of defects in HfO\({}_{\mbox{2}}\) high-K gate dielectric layers}, journal = {Microelectron. Reliab.}, volume = {45}, number = {5-6}, pages = {798--801}, year = {2005}, url = {https://doi.org/10.1016/j.microrel.2004.11.045}, doi = {10.1016/j.microrel.2004.11.045}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/KaushikCDERCRWCG05.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }

manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.