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Jisu Kim
Publications
- 2016
- [j25]Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1361-1370 (2016) - [j24]Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2851-2860 (2016) - 2015
- [j21]Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1776-1784 (2015) - [j19]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs 62-II(12): 1109-1113 (2015) - 2014
- [j13]Youngdon Jung, Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An MTJ-based non-volatile flip-flop for high-performance SoC. Int. J. Circuit Theory Appl. 42(4): 394-406 (2014) - [j12]Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs 61-II(3): 193-197 (2014) - [j11]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(12): 3376-3385 (2014) - [j8]Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1620-1624 (2014) - [j7]Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1630-1634 (2014) - [c17]Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS 2014: 1953-1956 - 2013
- [c14]Taehui Na, Kyungho Ryu, Jisu Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A comparative study of STT-MTJ based non-volatile flip-flops. ISCAS 2013: 109-112 - 2012
- [j5]Jisu Kim, Kyungho Ryu, Seung-Hyuk Kang, Seong-Ook Jung:
A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM). IEEE Trans. Very Large Scale Integr. Syst. 20(1): 181-186 (2012) - [j4]Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. IEEE Trans. Very Large Scale Integr. Syst. 20(11): 2044-2053 (2012) - 2011
- [j3]Jee-Hwan Song, Jisu Kim, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Sensing margin trend with technology scaling in MRAM. Int. J. Circuit Theory Appl. 39(3): 313-325 (2011) - [c7]Youngdon Jung, Jisu Kim, Kyungho Ryu, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
MTJ based non-volatile flip-flop in deep submicron technology. ISOCC 2011: 424-427 - 2010
- [j2]Jisu Kim, Jee-Hwan Song, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits. IEICE Trans. Electron. 93-C(6): 912-921 (2010)
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