Gérard Ghibaudo

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with C. A. Dimitriadis

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Publications

2016
[j31]
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Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis:
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. 56: 10-16 (2016)
[c27]
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  - conf/essderc/LavievilleKTBDG16
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R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC 2016: 142-145
[c26]
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Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259
2015
[c20]
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  - conf/irps/TheodorouIHPJDG15
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Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo:
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS 2015: 1
2014
[c15]
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Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC 2014: 214-217
2012
[c6]
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Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC 2012: 334-337
[c5]
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  - conf/icecsys/FasarakisTTPDG12
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Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo:
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS 2012: 953-956

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