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Matteo Meneghini

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Eleonora Canato

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Publications

2020
[c24]
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  dblp key:
  - conf/irps/MasinMCBSSBMZM20
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  persistent URL:
  - https://dblp.org/rec/conf/irps/MasinMCBSSBMZM20
Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. IRPS 2020: 1-4
2019
[c20]
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  dblp key:
  - conf/irps/CanatoMBZMMSBM19
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  - https://dblp.org/rec/conf/irps/CanatoMBZMMSBM19
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens:
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS 2019: 1-6
[c16]
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  dblp key:
  - conf/irps/TajalliCNMSMZM19
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  - https://dblp.org/rec/conf/irps/TajalliCNMSMZM19
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. IRPS 2019: 1-6
2018
[j52]
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  dblp key:
  - journals/mr/TajalliCNMSMZM18
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  - https://dblp.org/rec/journals/mr/TajalliCNMSMZM18
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectron. Reliab. 88-90: 572-576 (2018)
[c13]
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  dblp key:
  - conf/irps/StockmanCTMMZMB18
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  - https://dblp.org/rec/conf/irps/StockmanCTMMZMB18
Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot:
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. IRPS 2018: 4
2017
[j43]
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  dblp key:
  - journals/mr/RossettoMCBSPDT17
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  - https://dblp.org/rec/journals/mr/RossettoMCBSPDT17
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017)

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