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Semantic ScholarBarbara De Salvo
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2010 – today
- 2019
[c17]Thomas Dalgaty, Melika Payvand, Barbara De Salvo, Jerome Casas, Giusy Lama, Etienne Nowak, Giacomo Indiveri, Elisa Vianello:
Hybrid CMOS-RRAM Neurons with Intrinsic Plasticity. ISCAS 2019: 1-5- 2018
- [c16]Barbara De Salvo:
Brain-Inspired technologies: Towards chips that think? ISSCC 2018: 12-18 - [c15]Thomas Dalgaty, Elisa Vianello, Denys Ly, Giacomo Indiveri, Barbara De Salvo, Etienne Nowak, Jerome Casas:
Insect-Inspired Elementary Motion Detection Embracing Resistive Memory and Spiking Neural Networks. Living Machines 2018: 115-128 - 2017
- [j3]Yiran Chen, Tei-Wei Kuo, Barbara De Salvo:
Guest Editors' Introduction: Critical and Enabling Techniques for Emerging Memories. IEEE Design & Test 34(3): 6-7 (2017) - [j2]Mouhamad Alayan
, Elisa Vianello, Barbara De Salvo, Luca Perniola, Andrea Padovani, Luca Larcher:
Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM. IEEE Design & Test 34(3): 23-30 (2017) - [c14]Elisa Vianello, Thilo Werner, Alessandro Grossi, Etienne Nowak, Barbara De Salvo, Luca Perniola, Olivier Bichler, Blaise Yvert:
Bioinspired Programming of Resistive Memory Devices for Implementing Spiking Neural Networks. ACM Great Lakes Symposium on VLSI 2017: 393-398 - 2016
- [c13]Thilo Werner, Daniele Garbin, Elisa Vianello, Olivier Bichler, D. Cattaert, Blaise Yvert, Barbara De Salvo, Luca Perniola:
Real-time decoding of brain activity by embedded Spiking Neural Networks using OxRAM synapses. ISCAS 2016: 2318-2321 - 2015
- [c12]Barbara De Salvo, Elisa Vianello, Olivier Thomas, Fabien Clermidy, Olivier Bichler, Christian Gamrat, Luca Perniola:
Emerging resistive memories for low power embedded applications and neuromorphic systems. ISCAS 2015: 3088-3091 - [c11]Daniele Garbin, Elisa Vianello, Olivier Bichler, M. Azzaz, Quentin Rafhay, Philippe Candelier, Christian Gamrat, Gérard Ghibaudo, Barbara De Salvo, Luca Perniola:
On the impact of OxRAM-based synapses variability on convolutional neural networks performance. NANOARCH 2015: 193-198 - 2014
- [c10]François Andrieu, Mikaël Casse, E. Baylac, P. Perreau, O. Nier, D. Rideau, R. Berthelon, F. Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, Rossella Ranica, Nicolas Planes, W. Schwarzenbach, E. Richard, Emmanuel Josse, Olivier Weber, Franck Arnaud, Maud Vinet, Olivier Faynot, M. Haond:
Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. ESSDERC 2014: 106-109 - 2013
- [c9]B. Traore, Elisa Vianello, Gabriel Molas, M. Gely, J.-F. Nodin, E. Jalaguier, Philippe Blaise, B. De Salvo, Leonardo R. C. Fonseca, K.-H. Xue, Y. Nishi:
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. ESSDERC 2013: 170-173 - [c8]Remi Coquand, Sylvain Barraud, Mikaël Casse, Masahiro Koyama, V. Maffini-Alvaro, M.-P. Samson, L. Tosti, X. Mescot, Gérard Ghibaudo, Stephane Monfray, Frédéric Boeuf, Olivier Faynot, B. De Salvo:
Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC 2013: 198-201 - [c7]Giorgio Palma, Elisa Vianello, Olivier Thomas, Houcine Oucheikh, Santhosh Onkaraiah, Alain Toffoli, C. Carabasse, Gabriel Molas, B. De Salvo:
A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. ESSDERC 2013: 264-267 - [c6]Elisa Vianello, Olivier Thomas, M. Harrand, Santhosh Onkaraiah, T. Cabout, B. Traore, T. Diokh, Houcine Oucheikh, Luca Perniola, Gabriel Molas, Philippe Blaise, J.-F. Nodin, E. Jalaguier, Barbara De Salvo:
Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design. ICICDT 2013: 235-238 - [c5]Giorgio Palma, Manan Suri, Damien Querlioz, Elisa Vianello, Barbara De Salvo:
Stochastic neuron design using conductive bridge RAM. NANOARCH 2013: 95-100 - [c4]Manan Suri, Daniele Garbin, Olivier Bichler, Damien Querlioz, Dominique Vuillaume, Christian Gamrat, Barbara De Salvo:
Impact of PCM resistance-drift in neuromorphic systems and drift-mitigation strategy. NANOARCH 2013: 140-145 - 2012
- [j1]Gabriele Navarro, S. Souiki, A. Persico, Veronique Sousa, J.-F. Nodin, Carine Jahan, F. Aussenac, V. Delaye, O. Cueto, Luca Perniola, B. De Salvo:
High temperature reliability of μtrench Phase-Change Memory devices. Microelectronics Reliability 52(9-10): 1928-1931 (2012) - [c3]Elisa Vianello, Carlo Cagli, Gabriel Molas, Emeline Souchier, Philippe Blaise, C. Carabasse, G. Rodriguez, V. Jousseaume, B. De Salvo, F. Longnos, F. Dahmani, P. Verrier, D. Bretegnier, J. Liebault:
On the impact of Ag doping on performance and reliability of GeS2-based Conductive Bridge Memories. ESSDERC 2012: 278-281 - [c2]Quentin Hubert, Carine Jahan, Alain Toffoli, Gabriele Navarro, S. Chandrashekar, Pierre Noe, Veronique Sousa, Luca Perniola, J.-F. Nodin, A. Persico, S. Maitrejean, A. Roule, E. Henaff, M. Tessaire, P. Zuliani, R. Annunziata, Gilles Reimbold, G. Pananakakis, B. De Salvo:
Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. ESSDERC 2012: 286-289 - 2011
- [c1]Manan Suri, Veronique Sousa, Luca Perniola, Dominique Vuillaume, Barbara De Salvo:
Phase change memory for synaptic plasticity application in neuromorphic systems. IJCNN 2011: 619-624
Coauthor Index
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