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R. Khlil

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2000 – 2009

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2006
[j2]
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  - journals/mj/VexlerHGTKMSG06
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M. I. Vexler, A. El Hdiy, D. Grgec, S. E. Tyaginov, R. Khlil, Bernd Meinerzhagen, A. F. Shulekin, I. V. Grekhov:
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. Microelectron. J. 37(2): 114-120 (2006)
2004
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R. Khlil, A. El Hdiy, A. F. Shulekin, S. E. Tyaginov, M. I. Vexler:
Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. Microelectron. Reliab. 44(3): 543-546 (2004)

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