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2010 – today
- 2019
[j12]Tinish Bhattacharya
, Sai Li, Yangqi Huang, Wang Kang, Weisheng Zhao, Manan Suri:
Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems. IEEE Access 7: 5034-5044 (2019)- [j11]Yinglin Zhao, Peng Ouyang, Wang Kang, Shouyi Yin, Youguang Zhang, Shaojun Wei, Weisheng Zhao:
An STT-MRAM Based in Memory Architecture for Low Power Integral Computing. IEEE Trans. Computers 68(4): 617-623 (2019) - [c36]Zheng Liang, Guangyu Sun, Wang Kang, Xing Chen, Weisheng Zhao:
ZUMA: Enabling Direct Insertion/Deletion Operations with Emerging Skyrmion Racetrack Memory. DAC 2019: 158 - [c35]Hao Cai, Menglin Han, Weiwei Shan, Jun Yang, You Wang, Wang Kang, Weisheng Zhao:
Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI. ACM Great Lakes Symposium on VLSI 2019: 135-140 - [c34]Yinglin Zhao, Jianlei Yang, Xiaotao Jia, Xueyan Wang, Zhaohao Wang, Wang Kang, Youguang Zhang, Weisheng Zhao:
Exploiting Near-Memory Processing Architectures for Bayesian Neural Networks Acceleration. ISVLSI 2019: 203-206 - [i4]Wang Kang:
U2Fi: A Provisioning Scheme of IoT Devices with Universal Cryptographic Tokens. CoRR abs/1906.06009 (2019) - 2018
- [j10]He Zhang, Wang Kang, Youguang Zhang, Meng-Fan Chang, Weisheng Zhao:
A Full-Sensing-Margin Dual-Reference Sensing Scheme for Deeply-Scaled STT-RAM. IEEE Access 6: 64250-64260 (2018) - [c33]He Zhang, Wang Kang, Zhaohao Wang, Erya Deng, Youguang Zhang, Weisheng Zhao:
High-Density and Fast-Configuration Non-Volatile Look-Up Table Based on NAND-Like Spintronic Memory. APCCAS 2018: 382-385 - [c32]Fan Chen, Zheng Li, Wang Kang, Weisheng Zhao, Hai Li, Yiran Chen:
Process variation aware data management for magnetic skyrmions racetrack memory. ASP-DAC 2018: 221-226 - [c31]Peng Xiaoyu, Tan Xiaohui, Wang Kang:
An Automatic Method for Semantic Focal Feature Point Tracking of 3D Human Model in Motion Sequence. CW 2018: 74-81 - [c30]Wang Kang, Xing Chen, Daoqian Zhu, Sai Li, Yangqi Huang, Youguang Zhang, Weisheng Zhao:
Magnetic skyrmions for future potential memory and logic applications: Alternative information carriers. DATE 2018: 119-124 - [c29]Hao Cai, You Wang, Wang Kang, Lirida A. B. Naviner, Weiwei Shan, Jun Yang, Weisheng Zhao:
Enabling Resilient Voltage-Controlled MeRAM Using Write Assist Techniques. ISCAS 2018: 1-5 - [c28]Bing Li, Fan Chen, Wang Kang, Weisheng Zhao, Yiran Chen, Hai Li:
Design and Data Management for Magnetic Racetrack Memory. ISCAS 2018: 1-4 - [c27]Zhaohao Wang, Zuwei Li, Yang Liu, Simin Li, Liang Chang, Wang Kang, Youguang Zhang, Weisheng Zhao:
Progresses and challenges of spin orbit torque driven magnetization switching and application (Invited). ISCAS 2018: 1-5 - [c26]Hao Cai, You Wang, Wang Kang, Lirida A. B. Naviner, Xinning Liu, Jun Yang, Weisheng Zhao:
MRAM-on-FDSOI Integration: A Bit-Cell Perspective. ISVLSI 2018: 263-268 - [c25]Liuyang Zhang, Wang Kang, Hao Cai, Peng Ouyang, Lionel Torres, Youguang Zhang, Aida Todri-Sanial, Weisheng Zhao:
A Robust Dual Reference Computing-in-Memory Implementation and Design Space Exploration Within STT-MRAM. ISVLSI 2018: 275-280 - [c24]Sai Li, Wang Kang, Xing Chen, Jinyu Bai, Biao Pan, Youguang Zhang, Weisheng Zhao:
Emerging Neuromorphic Computing Paradigms Exploring Magnetic Skyrmions. ISVLSI 2018: 539-544 - [c23]Chaoxin Ding, Wang Kang, He Zhang, Youguang Zhang, Weisheng Zhao:
A Novel Cross-point MRAM with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation. NANOARCH 2018: 72-78 - [c22]Wang Kang, Xing Chen, Daoqian Zhu, Xichao Zhang, Yan Zhou, Keni Qiu, Youguang Zhang, Weisheng Zhao:
A Comparative Study on Racetrack Memories: Domain Wall vs. Skyrmion. NVMSA 2018: 7-12 - [c21]Erya Deng, Zhaohao Wang, Wang Kang, Shaoqian Wei, Weisheng Zhao:
Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM. VLSI-SoC 2018: 184-187 - 2017
- [j9]Wang Kang, Liang Chang, Zhaohao Wang, Weifeng Lv, Guangyu Sun, Weisheng Zhao:
Pseudo-Differential Sensing Framework for STT-MRAM: A Cross-Layer Perspective. IEEE Trans. Computers 66(3): 531-544 (2017) - [j8]Wang Kang, Tingting Pang, Weifeng Lv, Weisheng Zhao:
Dynamic Dual-Reference Sensing Scheme for Deep Submicrometer STT-MRAM. IEEE Trans. on Circuits and Systems 64-I(1): 122-132 (2017) - [c20]Jiaqi Wei, Liang Chang, Zhaohao Wang, Xiaoyang Lin, Kaihua Cao, Hushan Cui, Wang Kang, Haoxuan Chen, Lang Zeng, Youguang Zhang, Chao Zhao, Weisheng Zhao:
Ultrafast spintronic integrated circuits. ASICON 2017: 1021-1024 - [c19]Wang Kang, Liang Chang, Youguang Zhang, Weisheng Zhao:
Voltage-controlled MRAM for working memory: Perspectives and challenges. DATE 2017: 542-547 - [c18]Hao Cai, You Wang, Lirida A. B. Naviner, Wang Kang, Weisheng Zhao:
Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device. ACM Great Lakes Symposium on VLSI 2017: 23-28 - [c17]Wang Kang, Zhaohao Wang, He Zhang, Sai Li, Youguang Zhang, Weisheng Zhao:
Advanced Low Power Spintronic Memories beyond STT-MRAM. ACM Great Lakes Symposium on VLSI 2017: 299-304 - [c16]Wang Kang, He Zhang, Peng Ouyang, Youguang Zhang, Weisheng Zhao:
Programmable Stateful In-Memory Computing Paradigm via a Single Resistive Device. ICCD 2017: 613-616 - [c15]Bicheng Liu, Shouzhen Gu, Mingsong Chen, Wang Kang, Jingtong Hu, Qingfeng Zhuge, Edwin Hsing-Mean Sha:
An Efficient Racetrack Memory-Based Processing-in-Memory Architecture for Convolutional Neural Networks. ISPA/IUCC 2017: 383-390 - 2016
- [j7]Yi Ran, Wang Kang, Youguang Zhang, Jacques-Olivier Klein, Weisheng Zhao:
Read disturbance issue and design techniques for nanoscale STT-MRAM. Journal of Systems Architecture - Embedded Systems Design 71: 2-11 (2016) - [j6]Wang Kang, Yangqi Huang, Xichao Zhang, Yan Zhou, Weisheng Zhao:
Skyrmion-Electronics: An Overview and Outlook. Proceedings of the IEEE 104(10): 2040-2061 (2016) - [c14]Wang Kang, Tingting Pang, Bi Wu, Weifeng Lv, Youguang Zhang, Guangyu Sun, Weisheng Zhao:
PDS: pseudo-differential sensing scheme for STT-MRAM. DAC 2016: 120:1-120:6 - [c13]Liuyang Zhang, Aida Todri-Sanial, Wang Kang, Youguang Zhang, Lionel Torres, Yuanqing Cheng, Weisheng Zhao:
Quantitative evaluation of reliability and performance for STT-MRAM. ISCAS 2016: 1150-1153 - [c12]He Zhang, Wang Kang, Tingting Pang, Weifeng Lv, Youguang Zhang, Weisheng Zhao:
Dual reference sensing scheme with triple steady states for deeply scaled STT-MRAM. NANOARCH 2016: 1-6 - [c11]Liang Chang, Zhaohao Wang, Yuqian Gao, Wang Kang, Youguang Zhang, Weisheng Zhao:
Evaluation of spin-Hall-assisted STT-MRAM for cache replacement. NANOARCH 2016: 73-78 - [c10]Qian Shi, Zhaohao Wang, Yuqian Gao, Liang Chang, Wang Kang, Youguang Zhang, Weisheng Zhao:
A spin Hall effect-based multi-level cell for MRAM. NANOARCH 2016: 143-144 - [i3]Wang Kang, Yangqi Huang, Xichao Zhang, Yan Zhou, Weifeng Lv, Weisheng Zhao:
Skyrmions as Compact, Robust and Energy-Efficient Interconnects for Domain Wall (DW)-based Systems. CoRR abs/1601.03085 (2016) - [i2]Wang Kang, Chentian Zheng, Yangqi Huang, Xichao Zhang, Yan Zhou, Weifeng Lv, Weisheng Zhao:
Complementary Skyrmion Racetrack Memory with Voltage Manipulation. CoRR abs/1602.08799 (2016) - [i1]Yangqi Huang, Wang Kang, Xichao Zhang, Yan Zhou, Weisheng Zhao:
Magnetic skyrmion-based synaptic devices. CoRR abs/1608.07955 (2016) - 2015
- [j5]Wang Kang, Liuyang Zhang, Weisheng Zhao, Jacques-Olivier Klein, Youguang Zhang, Dafine Ravelosona, Claude Chappert:
Yield and Reliability Improvement Techniques for Emerging Nonvolatile STT-MRAM. IEEE J. Emerg. Sel. Topics Circuits Syst. 5(1): 28-39 (2015) - [j4]Wang Kang, Yue Zhang, Zhaohao Wang, Jacques-Olivier Klein, Claude Chappert, Dafine Ravelosona, Gefei Wang, Youguang Zhang, Weisheng Zhao:
Spintronics: Emerging Ultra-Low-Power Circuits and Systems beyond MOS Technology. JETC 12(2): 16:1-16:42 (2015) - [j3]Erya Deng, Yue Zhang, Wang Kang, Bernard Dieny, Jacques-Olivier Klein, Guillaume Prenat, Weisheng Zhao:
Synchronous 8-bit Non-Volatile Full-Adder based on Spin Transfer Torque Magnetic Tunnel Junction. IEEE Trans. on Circuits and Systems 62-I(7): 1757-1765 (2015) - [c9]Sajid Ali, Zhongke Wu, Xulong Li, Muhammad Idrees, Wang Kang, Mingquan Zhou:
A Novel Method: 3-D Gait Curve for Human Identification. ICIG (1) 2015: 321-337 - [c8]Liuyang Zhang, Wang Kang, Youguang Zhang, Yuanqing Cheng, Lang Zeng, Jacques-Olivier Klein, Weisheng Zhao:
Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM. ISVLSI 2015: 461-466 - [c7]Yi Ran, Wang Kang, Youguang Zhang, Jacques-Olivier Klein, Weisheng Zhao:
Read disturbance issue for nanoscale STT-MRAM. NVMSA 2015: 1-6 - [c6]Tingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao:
Nonvolatile radiation hardened DICE latch. NVMTS 2015: 1-4 - 2014
- [j2]Weisheng Zhao, Jean Michel Portal, Wang Kang, Mathieu Moreau, Yue Zhang, Hassen Aziza, Jacques-Olivier Klein, Zhaohao Wang, Damien Querlioz, Damien Deleruyelle, Marc Bocquet, Dafine Ravelosona, Christophe Muller, Claude Chappert:
Design and analysis of crossbar architecture based on complementary resistive switching non-volatile memory cells. J. Parallel Distrib. Comput. 74(6): 2484-2496 (2014) - [c5]Wang Kang, Weisheng Zhao, Zhaohao Wang, Jacques-Olivier Klein, Yue Zhang, Djaafar Chabi, Youguang Zhang, Dafine Ravelosona, Claude Chappert:
An overview of spin-based integrated circuits. ASP-DAC 2014: 676-683 - [c4]Yue Zhang, Weisheng Zhao, Jacques-Olivier Klein, Wang Kang, Damien Querlioz, Youguang Zhang, Dafine Ravelosona, Claude Chappert:
Spintronics for low-power computing. DATE 2014: 1-6 - [c3]Zhaohao Wang, Weisheng Zhao, Wang Kang, Youguang Zhang, Jacques-Olivier Klein, Claude Chappert:
Ferroelectric tunnel memristor-based neuromorphic network with 1T1R crossbar architecture. IJCNN 2014: 29-34 - [c2]Wang Kang, Weisheng Zhao, Lun Yang, Jacques-Olivier Klein, Youguang Zhang, Dafine Ravelosona:
One-step majority-logic-decodable codes enable STT-MRAM for high speed working memories. NVMSA 2014: 1-6 - 2013
- [j1]Wang Kang, Weisheng Zhao, Zhaohao Wang, Yue Zhang, Jacques-Olivier Klein, Youguang Zhang, Claude Chappert, Dafine Ravelosona:
A low-cost built-in error correction circuit design for STT-MRAM reliability improvement. Microelectronics Reliability 53(9-11): 1224-1229 (2013) - 2012
- [c1]Wang Kang, Youguang Zhang, Mingbang Wang, Guoyan Li:
Improving flash memory reliability with dynamic thresholds: Signal processing and coding schemes. CHINACOM 2012: 161-166
Coauthor Index
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