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BibTeX records: Tetsuzo Ueda
@inproceedings{DBLP:conf/irps/FabrisMSBMZKTIU19, author = {Eric E. Fabris and Matteo Meneghini and Carlo De Santi and Matteo Borga and Gaudenzio Meneghesso and Enrico Zanoni and Y. Kinoshita and Kenichiro Tanaka and H. Ishida and Tetsuzo Ueda}, title = {Hot-Electron Effects in GaN GITs and HD-GITs: {A} Comprehensive Analysis}, booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey, CA, USA, March 31 - April 4, 2019}, pages = {1--6}, publisher = {{IEEE}}, year = {2019}, url = {https://doi.org/10.1109/IRPS.2019.8720472}, doi = {10.1109/IRPS.2019.8720472}, timestamp = {Tue, 07 May 2024 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/irps/FabrisMSBMZKTIU19.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/irps/TanakaHU19, author = {Kenichiro Tanaka and Masahiro Hikita and Tetsuzo Ueda}, title = {Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor {(GIT)}}, booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey, CA, USA, March 31 - April 4, 2019}, pages = {1--4}, publisher = {{IEEE}}, year = {2019}, url = {https://doi.org/10.1109/IRPS.2019.8720560}, doi = {10.1109/IRPS.2019.8720560}, timestamp = {Sun, 25 Oct 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/irps/TanakaHU19.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/irps/IkoshiTYAHSYUTU18, author = {Ayanori Ikoshi and Masahiro Toki and Hiroto Yamagiwa and Daijiro Arisawa and Masahiro Hikita and Kazuki Suzuki and Manabu Yanagihara and Yasuhiro Uemoto and Kenichiro Tanaka and Tetsuzo Ueda}, title = {Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor {(HD-GIT)} under practical switching operations}, booktitle = {{IEEE} International Reliability Physics Symposium, {IRPS} 2018, Burlingame, CA, USA, March 11-15, 2018}, pages = {4}, publisher = {{IEEE}}, year = {2018}, url = {https://doi.org/10.1109/IRPS.2018.8353594}, doi = {10.1109/IRPS.2018.8353594}, timestamp = {Sun, 25 Oct 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/irps/IkoshiTYAHSYUTU18.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/KusumotoOHTNUKS16, author = {Osamu Kusumoto and Atsushi Ohoka and Nobuyuki Horikawa and Kohtaro Tanaka and Masahiko Niwayama and Masao Uchida and Yoshihiko Kanzawa and Kazuyuki Sawada and Tetsuzo Ueda}, title = {Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)}, journal = {Microelectron. Reliab.}, volume = {58}, pages = {158--163}, year = {2016}, url = {https://doi.org/10.1016/j.microrel.2015.11.033}, doi = {10.1016/J.MICROREL.2015.11.033}, timestamp = {Mon, 26 Oct 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/KusumotoOHTNUKS16.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/vlsic/UjitaKUMKTIU16, author = {Shinji Ujita and Yusuke Kinoshita and Hidekazu Umeda and Tatsuo Morita and Kazuhiro Kaibara and Satoshi Tamura and Masahiro Ishida and Tetsuzo Ueda}, title = {A fully integrated GaN-based power {IC} including gate drivers for high-efficiency {DC-DC} Converters}, booktitle = {2016 {IEEE} Symposium on {VLSI} Circuits, {VLSIC} 2016, Honolulu, HI, USA, June 15-17, 2016}, pages = {1--2}, publisher = {{IEEE}}, year = {2016}, url = {https://doi.org/10.1109/VLSIC.2016.7573496}, doi = {10.1109/VLSIC.2016.7573496}, timestamp = {Sun, 25 Oct 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/vlsic/UjitaKUMKTIU16.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/ieiceee/IbuchiFUIU15, author = {Takaaki Ibuchi and Tsuyoshi Funaki and Shinji Ujita and Masahiro Ishida and Tetsuzo Ueda}, title = {Conducted noise of GaN Schottky barrier diode in a {DC-DC} converter}, journal = {{IEICE} Electron. Express}, volume = {12}, number = {24}, pages = {20150912}, year = {2015}, url = {https://doi.org/10.1587/elex.12.20150912}, doi = {10.1587/ELEX.12.20150912}, timestamp = {Fri, 12 Feb 2021 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/ieiceee/IbuchiFUIU15.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/ieicet/NegoroKMNASUT12, author = {Noboru Negoro and Masayuki Kuroda and Tomohiro Murata and Masaaki Nishijima and Yoshiharu Anda and Hiroyuki Sakai and Tetsuzo Ueda and Tsuyoshi Tanaka}, title = {K-Band AlGaN/GaN {MIS-HFET} on Si with High Output Power over 10 {W}}, journal = {{IEICE} Trans. Electron.}, volume = {95-C}, number = {8}, pages = {1327--1331}, year = {2012}, url = {https://doi.org/10.1587/transele.E95.C.1327}, doi = {10.1587/TRANSELE.E95.C.1327}, timestamp = {Mon, 26 Oct 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/ieicet/NegoroKMNASUT12.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/isscc/NagaiNFOSUTU12, author = {Shuichi Nagai and Noboru Negoro and Takeshi Fukuda and Nobuyuki Otsuka and Hiroyuki Sakai and Tetsuzo Ueda and Tsuyoshi Tanaka and Daisuke Ueda}, title = {A DC-isolated gate drive {IC} with drive-by-microwave technology for power switching devices}, booktitle = {2012 {IEEE} International Solid-State Circuits Conference, {ISSCC} 2012, San Francisco, CA, USA, February 19-23, 2012}, pages = {404--406}, publisher = {{IEEE}}, year = {2012}, url = {https://doi.org/10.1109/ISSCC.2012.6177066}, doi = {10.1109/ISSCC.2012.6177066}, timestamp = {Sun, 25 Oct 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/isscc/NagaiNFOSUTU12.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@inproceedings{DBLP:conf/esscirc/UedaTU11, author = {Tetsuzo Ueda and Tsuyoshi Tanaka and Daisuke Ueda}, title = {Current status on GaN-based RF-power devices}, booktitle = {Proceedings of the 37th European Solid-State Circuits Conference, {ESSCIRC} 2011, Helsinki, Finland, Sept. 12-16, 2011}, pages = {61--66}, publisher = {{IEEE}}, year = {2011}, url = {https://doi.org/10.1109/ESSCIRC.2011.6044915}, doi = {10.1109/ESSCIRC.2011.6044915}, timestamp = {Sun, 25 Oct 2020 01:00:00 +0200}, biburl = {https://dblp.org/rec/conf/esscirc/UedaTU11.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/ieicet/SugiuraKMKUT08, author = {Shun Sugiura and Shigeru Kishimoto and Takashi Mizutani and Masayuki Kuroda and Tetsuzo Ueda and Tsuyoshi Tanaka}, title = {Enhancement-Mode n-Channel GaN MOSFETs Using HfO\({}_{\mbox{2}}\) as a Gate Oxide}, journal = {{IEICE} Trans. Electron.}, volume = {91-C}, number = {7}, pages = {1001--1003}, year = {2008}, url = {https://doi.org/10.1093/ietele/e91-c.7.1001}, doi = {10.1093/IETELE/E91-C.7.1001}, timestamp = {Mon, 26 Oct 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/ieicet/SugiuraKMKUT08.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/ieiceee/IshidoMKUIU07, author = {Teruki Ishido and Hisayoshi Matsuo and Takuma Katayama and Tetsuzo Ueda and Kaoru Inoue and Daisuke Ueda}, title = {Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique}, journal = {{IEICE} Electron. Express}, volume = {4}, number = {24}, pages = {775--781}, year = {2007}, url = {https://doi.org/10.1587/elex.4.775}, doi = {10.1587/ELEX.4.775}, timestamp = {Fri, 12 Feb 2021 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/ieiceee/IshidoMKUIU07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
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