BibTeX records: Tetsuzo Ueda

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@inproceedings{DBLP:conf/irps/FabrisMSBMZKTIU19,
  author       = {Eric E. Fabris and
                  Matteo Meneghini and
                  Carlo De Santi and
                  Matteo Borga and
                  Gaudenzio Meneghesso and
                  Enrico Zanoni and
                  Y. Kinoshita and
                  Kenichiro Tanaka and
                  H. Ishida and
                  Tetsuzo Ueda},
  title        = {Hot-Electron Effects in GaN GITs and HD-GITs: {A} Comprehensive Analysis},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey,
                  CA, USA, March 31 - April 4, 2019},
  pages        = {1--6},
  publisher    = {{IEEE}},
  year         = {2019},
  url          = {https://doi.org/10.1109/IRPS.2019.8720472},
  doi          = {10.1109/IRPS.2019.8720472},
  timestamp    = {Tue, 07 May 2024 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/FabrisMSBMZKTIU19.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/irps/TanakaHU19,
  author       = {Kenichiro Tanaka and
                  Masahiro Hikita and
                  Tetsuzo Ueda},
  title        = {Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate
                  Injection Transistor {(GIT)}},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2019, Monterey,
                  CA, USA, March 31 - April 4, 2019},
  pages        = {1--4},
  publisher    = {{IEEE}},
  year         = {2019},
  url          = {https://doi.org/10.1109/IRPS.2019.8720560},
  doi          = {10.1109/IRPS.2019.8720560},
  timestamp    = {Sun, 25 Oct 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/TanakaHU19.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/irps/IkoshiTYAHSYUTU18,
  author       = {Ayanori Ikoshi and
                  Masahiro Toki and
                  Hiroto Yamagiwa and
                  Daijiro Arisawa and
                  Masahiro Hikita and
                  Kazuki Suzuki and
                  Manabu Yanagihara and
                  Yasuhiro Uemoto and
                  Kenichiro Tanaka and
                  Tetsuzo Ueda},
  title        = {Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor
                  {(HD-GIT)} under practical switching operations},
  booktitle    = {{IEEE} International Reliability Physics Symposium, {IRPS} 2018, Burlingame,
                  CA, USA, March 11-15, 2018},
  pages        = {4},
  publisher    = {{IEEE}},
  year         = {2018},
  url          = {https://doi.org/10.1109/IRPS.2018.8353594},
  doi          = {10.1109/IRPS.2018.8353594},
  timestamp    = {Sun, 25 Oct 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/irps/IkoshiTYAHSYUTU18.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/KusumotoOHTNUKS16,
  author       = {Osamu Kusumoto and
                  Atsushi Ohoka and
                  Nobuyuki Horikawa and
                  Kohtaro Tanaka and
                  Masahiko Niwayama and
                  Masao Uchida and
                  Yoshihiko Kanzawa and
                  Kazuyuki Sawada and
                  Tetsuzo Ueda},
  title        = {Reliability of Diode-Integrated SiC Power MOSFET(DioMOS)},
  journal      = {Microelectron. Reliab.},
  volume       = {58},
  pages        = {158--163},
  year         = {2016},
  url          = {https://doi.org/10.1016/j.microrel.2015.11.033},
  doi          = {10.1016/J.MICROREL.2015.11.033},
  timestamp    = {Mon, 26 Oct 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/mr/KusumotoOHTNUKS16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/vlsic/UjitaKUMKTIU16,
  author       = {Shinji Ujita and
                  Yusuke Kinoshita and
                  Hidekazu Umeda and
                  Tatsuo Morita and
                  Kazuhiro Kaibara and
                  Satoshi Tamura and
                  Masahiro Ishida and
                  Tetsuzo Ueda},
  title        = {A fully integrated GaN-based power {IC} including gate drivers for
                  high-efficiency {DC-DC} Converters},
  booktitle    = {2016 {IEEE} Symposium on {VLSI} Circuits, {VLSIC} 2016, Honolulu,
                  HI, USA, June 15-17, 2016},
  pages        = {1--2},
  publisher    = {{IEEE}},
  year         = {2016},
  url          = {https://doi.org/10.1109/VLSIC.2016.7573496},
  doi          = {10.1109/VLSIC.2016.7573496},
  timestamp    = {Sun, 25 Oct 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/vlsic/UjitaKUMKTIU16.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/ieiceee/IbuchiFUIU15,
  author       = {Takaaki Ibuchi and
                  Tsuyoshi Funaki and
                  Shinji Ujita and
                  Masahiro Ishida and
                  Tetsuzo Ueda},
  title        = {Conducted noise of GaN Schottky barrier diode in a {DC-DC} converter},
  journal      = {{IEICE} Electron. Express},
  volume       = {12},
  number       = {24},
  pages        = {20150912},
  year         = {2015},
  url          = {https://doi.org/10.1587/elex.12.20150912},
  doi          = {10.1587/ELEX.12.20150912},
  timestamp    = {Fri, 12 Feb 2021 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/ieiceee/IbuchiFUIU15.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/ieicet/NegoroKMNASUT12,
  author       = {Noboru Negoro and
                  Masayuki Kuroda and
                  Tomohiro Murata and
                  Masaaki Nishijima and
                  Yoshiharu Anda and
                  Hiroyuki Sakai and
                  Tetsuzo Ueda and
                  Tsuyoshi Tanaka},
  title        = {K-Band AlGaN/GaN {MIS-HFET} on Si with High Output Power over 10 {W}},
  journal      = {{IEICE} Trans. Electron.},
  volume       = {95-C},
  number       = {8},
  pages        = {1327--1331},
  year         = {2012},
  url          = {https://doi.org/10.1587/transele.E95.C.1327},
  doi          = {10.1587/TRANSELE.E95.C.1327},
  timestamp    = {Mon, 26 Oct 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/ieicet/NegoroKMNASUT12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/isscc/NagaiNFOSUTU12,
  author       = {Shuichi Nagai and
                  Noboru Negoro and
                  Takeshi Fukuda and
                  Nobuyuki Otsuka and
                  Hiroyuki Sakai and
                  Tetsuzo Ueda and
                  Tsuyoshi Tanaka and
                  Daisuke Ueda},
  title        = {A DC-isolated gate drive {IC} with drive-by-microwave technology for
                  power switching devices},
  booktitle    = {2012 {IEEE} International Solid-State Circuits Conference, {ISSCC}
                  2012, San Francisco, CA, USA, February 19-23, 2012},
  pages        = {404--406},
  publisher    = {{IEEE}},
  year         = {2012},
  url          = {https://doi.org/10.1109/ISSCC.2012.6177066},
  doi          = {10.1109/ISSCC.2012.6177066},
  timestamp    = {Sun, 25 Oct 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/NagaiNFOSUTU12.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@inproceedings{DBLP:conf/esscirc/UedaTU11,
  author       = {Tetsuzo Ueda and
                  Tsuyoshi Tanaka and
                  Daisuke Ueda},
  title        = {Current status on GaN-based RF-power devices},
  booktitle    = {Proceedings of the 37th European Solid-State Circuits Conference,
                  {ESSCIRC} 2011, Helsinki, Finland, Sept. 12-16, 2011},
  pages        = {61--66},
  publisher    = {{IEEE}},
  year         = {2011},
  url          = {https://doi.org/10.1109/ESSCIRC.2011.6044915},
  doi          = {10.1109/ESSCIRC.2011.6044915},
  timestamp    = {Sun, 25 Oct 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/conf/esscirc/UedaTU11.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/ieicet/SugiuraKMKUT08,
  author       = {Shun Sugiura and
                  Shigeru Kishimoto and
                  Takashi Mizutani and
                  Masayuki Kuroda and
                  Tetsuzo Ueda and
                  Tsuyoshi Tanaka},
  title        = {Enhancement-Mode n-Channel GaN MOSFETs Using HfO\({}_{\mbox{2}}\)
                  as a Gate Oxide},
  journal      = {{IEICE} Trans. Electron.},
  volume       = {91-C},
  number       = {7},
  pages        = {1001--1003},
  year         = {2008},
  url          = {https://doi.org/10.1093/ietele/e91-c.7.1001},
  doi          = {10.1093/IETELE/E91-C.7.1001},
  timestamp    = {Mon, 26 Oct 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/ieicet/SugiuraKMKUT08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/ieiceee/IshidoMKUIU07,
  author       = {Teruki Ishido and
                  Hisayoshi Matsuo and
                  Takuma Katayama and
                  Tetsuzo Ueda and
                  Kaoru Inoue and
                  Daisuke Ueda},
  title        = {Depth profiles of strain in AlGaN/GaN heterostructures grown on Si
                  characterized by electron backscatter diffraction technique},
  journal      = {{IEICE} Electron. Express},
  volume       = {4},
  number       = {24},
  pages        = {775--781},
  year         = {2007},
  url          = {https://doi.org/10.1587/elex.4.775},
  doi          = {10.1587/ELEX.4.775},
  timestamp    = {Fri, 12 Feb 2021 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/ieiceee/IshidoMKUIU07.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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