BibTeX records: Charles T. Rettner

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@article{DBLP:journals/jetc/JacksonRCBBCGRRPSSKLM13,
  author       = {Bryan L. Jackson and
                  Bipin Rajendran and
                  Gregory S. Corrado and
                  Matthew J. Breitwisch and
                  Geoffrey W. Burr and
                  Roger Cheek and
                  Kailash Gopalakrishnan and
                  Simone Raoux and
                  Charles T. Rettner and
                  Alvaro Padilla and
                  Alejandro G. Schrott and
                  Rohit S. Shenoy and
                  B{\"{u}}lent N. Kurdi and
                  Chung Hon Lam and
                  Dharmendra S. Modha},
  title        = {Nanoscale electronic synapses using phase change devices},
  journal      = {{ACM} J. Emerg. Technol. Comput. Syst.},
  volume       = {9},
  number       = {2},
  pages        = {12:1--12:20},
  year         = {2013},
  url          = {https://doi.org/10.1145/2463585.2463588},
  doi          = {10.1145/2463585.2463588},
  timestamp    = {Mon, 08 Jun 2020 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/jetc/JacksonRCBBCGRRPSSKLM13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/ibmrd/RaouxBBRCSSKCLL08,
  author       = {Simone Raoux and
                  Geoffrey W. Burr and
                  Matthew J. Breitwisch and
                  Charles T. Rettner and
                  Yi{-}Chou Chen and
                  Robert M. Shelby and
                  Martin Salinga and
                  Daniel Krebs and
                  Shih{-}Hung Chen and
                  Hsiang{-}Lan Lung and
                  Chung Hon Lam},
  title        = {Phase-change random access memory: {A} scalable technology},
  journal      = {{IBM} J. Res. Dev.},
  volume       = {52},
  number       = {4-5},
  pages        = {465--480},
  year         = {2008},
  url          = {https://doi.org/10.1147/rd.524.0465},
  doi          = {10.1147/RD.524.0465},
  timestamp    = {Fri, 13 Mar 2020 00:00:00 +0100},
  biburl       = {https://dblp.org/rec/journals/ibmrd/RaouxBBRCSSKCLL08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}

@article{DBLP:journals/ibmrd/KargMBRSJLJSLAWSDC08,
  author       = {Siegfried F. Karg and
                  Gerhard Ingmar Meijer and
                  J. Georg Bednorz and
                  Charles T. Rettner and
                  Alejandro G. Schrott and
                  Eric A. Joseph and
                  Chung Hon Lam and
                  Markus Janousch and
                  Urs Staub and
                  Fabio LaMattina and
                  Santos F. Alvarado and
                  Daniel Widmer and
                  Richard Stutz and
                  Ute Drechsler and
                  Daniele Caimi},
  title        = {Transition-metal-oxide-based resistance-change memories},
  journal      = {{IBM} J. Res. Dev.},
  volume       = {52},
  number       = {4-5},
  pages        = {481--492},
  year         = {2008},
  url          = {https://doi.org/10.1147/rd.524.0481},
  doi          = {10.1147/RD.524.0481},
  timestamp    = {Sun, 02 Oct 2022 01:00:00 +0200},
  biburl       = {https://dblp.org/rec/journals/ibmrd/KargMBRSJLJSLAWSDC08.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}