BibTeX record conf/isscc/FujimuraHSSKTKFKNY10

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@inproceedings{DBLP:conf/isscc/FujimuraHSSKTKFKNY10,
  author       = {Yuki Fujimura and
                  Osamu Hirabayashi and
                  Takahiko Sasaki and
                  Azuma Suzuki and
                  Atsushi Kawasumi and
                  Yasuhisa Takeyama and
                  Keiichi Kushida and
                  Gou Fukano and
                  Akira Katayama and
                  Yusuke Niki and
                  Tomoaki Yabe},
  title        = {A configurable {SRAM} with constant-negative-level write buffer for
                  low-voltage operation with 0.149{\(\mathrm{\mu}\)}m\({}^{\mbox{2}}\)
                  cell in 32nm high-k metal-gate {CMOS}},
  booktitle    = {{IEEE} International Solid-State Circuits Conference, {ISSCC} 2010,
                  Digest of Technical Papers, San Francisco, CA, USA, 7-11 February,
                  2010},
  pages        = {348--349},
  publisher    = {{IEEE}},
  year         = {2010},
  url          = {https://doi.org/10.1109/ISSCC.2010.5433813},
  doi          = {10.1109/ISSCC.2010.5433813},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isscc/FujimuraHSSKTKFKNY10.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}