BibTeX record conf/isqed/NiiYFTIMM13

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@inproceedings{DBLP:conf/isqed/NiiYFTIMM13,
  author       = {Koji Nii and
                  Makoto Yabuuchi and
                  Hidehiro Fujiwara and
                  Yasumasa Tsukamoto and
                  Yuichiro Ishii and
                  Tetsuya Matsumura and
                  Yoshio Matsuda},
  title        = {A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53{\%} standby
                  leakage with multi-Vt asymmetric halo {MOS} and write assist circuitry},
  booktitle    = {International Symposium on Quality Electronic Design, {ISQED} 2013,
                  Santa Clara, CA, USA, March 4-6, 2013},
  pages        = {438--441},
  publisher    = {{IEEE}},
  year         = {2013},
  url          = {https://doi.org/10.1109/ISQED.2013.6523648},
  doi          = {10.1109/ISQED.2013.6523648},
  timestamp    = {Wed, 16 Oct 2019 14:14:55 +0200},
  biburl       = {https://dblp.org/rec/conf/isqed/NiiYFTIMM13.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}